isc website： 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). High voltage, high speed switching npn transistor in a plastic. BUAF Datasheet, BUAF NPN High-Voltage Transistor Datasheet, buy BUAF Transistor.
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Region Macedonia Kosovo Global. Soldering equipment Soldering irons Soldering stations HotAir stations Desoldering stations Multifunction stations more Because the controlled output power can be higher than the controlling input power, a transistor can amplify a signal. Add to cart On stock. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.
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Budf transistor equivalent substitute crossreference search. Bipolar transistors are so named because their operation involves both electrons and holes. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
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Collector – Base Voltage Vcbo. Telecommunication measuring equipment Cable and pipe tracing Cooper networks IT networks Optical networks Spectrum analysers more High collectorbase voltagevcbov high speed switching. Fluke, Mikroelektronika, Knipex and Logitech. A small current entering the base is amplified to produce a large collector and emitter current.
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Calibration equipment Electrical calibration equipment Pressure calibration equipment Temperature calibration equipment. A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. Budf philips semiconductors, budf datasheet.
It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals.
These two kinds of charge carriers are characteristic of the two bu270af of doped semiconductor material. Expected add to cart to know when it arrives. NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor the “base” between two N-doped layers.